Single Bipolar Transistors 2SD1592-AZ product image

2SD1592-AZ

$1.72
  • Description:TRANS NPN DARL 500V 5A
  • Series:-

SKU:27caa36a7fff Category: Brand:

  
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2SD1592-AZ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS NPN DARL 500V 5A. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1592-AZ

  • Description:TRANS NPN DARL 500V 5A
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):500 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 5mA, 2A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:400 @ 2A, 2V
  • Power - Max:1.5 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1592-AZ

2SD1592-AZ

Single Bipolar Transistors Overview

The Renesas 2SD1592-AZ is an NPN silicon Darlington power bipolar transistor designed for high-voltage, low-speed switching applications. It features a maximum collector current of 5 A and a collector-emitter voltage rating of 500 V. The device offers a minimum DC current gain (hFE) of 800 and a transition frequency of 150 MHz. With a maximum power dissipation of 1.5 W and an operating temperature range up to 150 °C, it is housed in a through-hole package suitable for discrete medium-to-high power circuits.

Single Bipolar Transistors Feature Summary

  • High DC current gain achieved through internal Darlington connection
  • Low collector saturation voltage for efficient switching
  • Reverse deterrence type construction
  • Designed for high-voltage low-speed switching environments

Single Bipolar Transistors Applications

  • High-voltage switching circuits
  • Discrete medium-power applications
  • High-power discrete devices
  • Low-speed switching systems

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet version from Renesas Electronics Corporation to confirm electrical characteristics and mechanical dimensions. Ensure compliance with RoHS standards as indicated by the -AZ suffix. Cross-reference pinout configurations with official documentation before PCB layout implementation to prevent installation errors.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high input impedance and significant voltage handling capabilities. The Darlington configuration provides substantial current amplification, reducing base drive requirements. Consider the 1.5 W power dissipation limit and thermal management needs when designing the heat sinking strategy for continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the Renesas 2SD series of NPN silicon transistors. It utilizes a triple-diffused structure optimized for robustness in high-voltage scenarios. The -AZ suffix typically denotes lead-free packaging compliant with environmental directives, distinguishing it from older manufacturing batches.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing circuit designs before considering alternative manufacturers or generic equivalents.

2SD1592-AZ2SD1592-AZ
$1.72
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