2SD1616A-T-AZ

Single Bipolar Transistors Overview

The 2SD1616A-T-AZ is an NPN epitaxial silicon small-signal transistor manufactured by Renesas Electronics Corporation. It features a maximum collector current of 1 A and a collector-emitter breakdown voltage of 60 V. The device has a minimum DC current gain (hFE) of 300 and a nominal transition frequency of 150 MHz. It is housed in a TO-92 package with a maximum power dissipation of 0.75 W and supports operating temperatures up to 150 °C.

Single Bipolar Transistors Feature Summary

• Designed for audio frequency power amplifier applications
• Suitable for medium speed switching operations

Single Bipolar Transistors Applications

• Audio frequency power amplifiers
• Medium speed switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'T' against official Renesas documentation, as standard listings often specify '-T92'. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as legacy part numbers may have varying environmental declarations depending on the production batch and region.

Single Bipolar Transistors Selection Notes

Select this component for low-power NPN switching and amplification tasks requiring a 60 V rating and 1 A current capacity. Ensure the thermal design accommodates the 0.75 W power dissipation limit in the TO-92 package. Verify that the required hFE range meets the circuit's biasing needs, noting the minimum specification of 300.

Single Bipolar Transistors Part Context

This transistor belongs to the 2SD1616 series of NPN silicon transistors. The 'A' variant typically denotes specific electrical characteristics within the family. Renesas acquired NEC Electronics, so historical documents may reference NEC branding while remaining valid for the current product line.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.