2SD1619T-TD-E-SY

$0.09

Description：NPN EPITAXIAL PLANAR SILICON
Series：*

SKU:193563f0ad10 Category: Single Bipolar Transistors Brand: Sanyo

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Product introduction

2SD1619T-TD-E-SY is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanyo. Its product description is NPN EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1619T-TD-E-SY

Description：NPN EPITAXIAL PLANAR SILICON
Series：*
Mfr：Sanyo
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD1619T-TD-E-SY

2SD1619T-TD-E-SY

Single Bipolar Transistors Overview

The 2SD1619T-TD-E-SY is an NPN epitaxial planar silicon transistor manufactured by Sanyo. It belongs to the 2SD1618 series, designed for low-voltage high-current amplifier and muting applications. The device features a small outline package with three pins, where the collector connects to the case. Key electrical characteristics include a maximum collector current of 0.7 A and a collector-to-emitter voltage rating of 15 V. It exhibits a minimum DC current gain (hFE) of 140 and supports a maximum power dissipation of 0.5 W at 25°C ambient temperature.

Single Bipolar Transistors Feature Summary

Low collector-to-emitter saturation voltage for efficient switching
Very small size facilitating high-density hybrid IC integration

Single Bipolar Transistors Applications

Low-voltage high-current amplification
Muting circuits in audio equipment

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation as Sanyo Semicon Device or Sanyo Semiconductor when sourcing this component. Confirm the specific ordering suffix matches the required tape-and-reel configuration if applicable. Ensure the part number aligns with the NPN epitaxial planar silicon specification. Cross-reference datasheets from authorized distributors to confirm authenticity and lot traceability. Check for any regional naming variations or equivalent part numbers from partner manufacturers like Fairchild or onsemi.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring compact NPN transistors with moderate current handling capabilities. The 15V collector-to-emitter voltage rating suits low-voltage logic and signal processing circuits. Consider the 0.7A continuous current limit and 0.5W power dissipation constraints for thermal management. The small outline package is ideal for space-constrained designs requiring high-density mounting. Evaluate the minimum hFE of 140 for gain requirements in amplifier stages.

Single Bipolar Transistors Part Context

This transistor is part of the 2SB1118/2SD1618 family of PNP/NPN epitaxial planar silicon transistors. The series is specifically engineered for low-voltage high-current amplifier and muting applications. The 2SD1619 variant shares similar physical dimensions and electrical profiles with the 2SD1618, differing primarily in specific grading or packaging configurations within the same product line.