Single Bipolar Transistors 2SD1619T-TD-E product image

2SD1619T-TD-E

$0.09
  • Description:NPN EPITAXIAL PLANAR SILICON
  • Series:*

SKU:6c8b903d6734 Category: Brand:

  
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2SD1619T-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is NPN EPITAXIAL PLANAR SILICON. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1619T-TD-E

  • Description:NPN EPITAXIAL PLANAR SILICON
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1619T-TD-E

2SD1619T-TD-E

Single Bipolar Transistors Overview

The onsemi 2SD1619T-TD-E is an NPN epitaxial planar silicon transistor designed for surface-mount applications. It features a maximum DC collector current of 3A and a collector-emitter voltage rating of 50V, with a collector-base voltage of 60V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.5W. Key electrical parameters include a minimum DC current gain (hFE) of 35 and a transition frequency (ft) of 150MHz. The emitter-base voltage is rated at 6V. Packaged in a PCP format with three pins, the component measures 4.5mm in length and 1.5mm in height.

Single Bipolar Transistors Feature Summary

  • NPN epitaxial planar silicon construction for reliable switching performance
  • Surface-mount PCP package design facilitating automated assembly processes
  • High thermal stability supporting operation up to 150°C junction temperature

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Low-power amplifier stages
  • Driver circuits for small loads

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source when sourcing this component, as it originates from onsemi's acquisition of Fairchild Semiconductor assets. Confirm that the received units match the exact part number suffix to ensure correct packaging and handling specifications. Cross-reference datasheets from authorized distributors to validate authenticity and traceability before integration into production lines.

Single Bipolar Transistors Selection Notes

Select this transistor for designs requiring moderate current handling capabilities in a compact surface-mount footprint. Ensure the application voltage does not exceed the 50V collector-emitter limit. Consider the 1.5W power dissipation constraint when designing thermal management solutions. Verify that the required current gain meets the minimum hFE specification for the intended circuit biasing conditions.

Single Bipolar Transistors Part Context

This component belongs to the broader family of bipolar junction transistors offered by onsemi. It serves as a standard discrete semiconductor device used across various electronic systems. The part represents a continuation of legacy designs now managed under the onsemi portfolio following corporate acquisitions. It is categorized alongside other single NPN transistors suitable for general electronics manufacturing.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include other NPN transistors with comparable 3A current ratings and similar voltage specifications. Check pinout compatibility if replacing in existing PCB layouts. Verify that alternative parts meet the same thermal and electrical performance criteria to maintain system reliability.

2SD1619T-TD-E2SD1619T-TD-E
$0.09
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