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2SD1621T-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 2A 25V. Review the specifications below when checking this part for your BOM.
The 2SD1621T-TD-E is an NPN epitaxial planar silicon transistor from the SANYO Semiconductor 2SD1621 series. It features a collector-to-emitter breakdown voltage of 25 V and a continuous collector current rating of 2 A, with pulse capability up to 5 A. The device utilizes FBET and MBIT processes for low saturation voltage and fast switching. Key electrical parameters include a DC current gain (hFE) ranging from 100 to 560 at 100 mA, a gain-bandwidth product of 150 MHz, and a maximum junction temperature of 150 °C. It is housed in an ultrasmall package suitable for high-density hybrid ICs.
Verify the manufacturer origin, as the 2SD1621 series was originally produced by SANYO Semiconductor, which has undergone corporate restructuring and brand transitions. Confirm that the specific 'TD' suffix corresponds to the required tape-and-reel packaging format intended for automated assembly. Ensure the component meets RoHS compliance standards if required by your manufacturing specifications.
Select this component for applications requiring high-current driving capabilities within a compact form factor. The wide safe operating area and fast switching speeds make it suitable for efficient power management circuits. Consider the hFE ranking requirements for your specific biasing conditions, as gain varies significantly across different bins.
This part belongs to the 2SD1621 family of high-current driver transistors, paired with the complementary PNP type 2SB1121. Designed for general electronics equipment such as home appliances and industrial devices, these transistors are not intended for special applications requiring extreme reliability or safety-critical functions without prior consultation.
Public confirmed substitute part numbers: None identified.
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