2SD1757KT146S

Single Bipolar Transistors Overview

The 2SD1757KT146S is an NPN bipolar junction transistor manufactured by Rohm Semiconductor, designed for surface-mount applications. It features a collector-emitter voltage (VCEO) of 15 V and a continuous collector current (IC) of 500 mA. The device operates with a power dissipation of 200 mW and supports junction temperatures up to 150 °C. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 560 depending on the classification rank, a transition frequency (fT) of 150 MHz, and a low collector-emitter saturation voltage. It is packaged in the SOT-346 (SMT3) format.

Single Bipolar Transistors Feature Summary

• Optimized for muting circuits due to low collector-emitter saturation voltage.
• Provides high DC current gain suitable for signal amplification.
• Features a compact surface-mount package for automated assembly.

Single Bipolar Transistors Applications

• Audio muting circuits
• Signal switching
• General-purpose amplification

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and tape-and-reel specifications. Ensure that the component meets the required hFE binning class for your circuit design. Confirm RoHS compliance status and storage conditions prior to procurement to maintain solderability and electrical performance.

Single Bipolar Transistors Selection Notes

Select this component when a low-saturation voltage NPN transistor is required for muting or switching applications within a 15 V supply range. Consider the SOT-346 footprint constraints and the available hFE gain ranges. Evaluate thermal management requirements given the 200 mW power dissipation limit in the small outline package.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1757K series of power transistors from Rohm Semiconductor. It is specifically engineered for audio and general electronic equipment where low saturation voltage is critical. The SMT3 package allows for efficient space utilization in portable devices and consumer electronics.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer's datasheet for officially confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substitution.

Single Bipolar Transistors FAQ

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 8 mV at IC/IB = 10/1 mA.

How is the DC current gain classified?

The hFE is classified into ranks Q (120-270), R (180-390), and S (270-560).

What is the maximum junction temperature?

The maximum junction temperature (Tj) is 150 °C.