2SD1758TLR

Single Bipolar Transistors Overview

The 2SD1758TLR is a medium power NPN silicon epitaxial planar transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 32 V and a continuous collector current (IC) rating of 2 A. The device achieves a typical low collector-emitter saturation voltage (VCE(sat)) of 0.5 V at IC/IB = 2A / 0.2A. Electrical characteristics include a DC current gain (hFE) range of 120 to 390, a transition frequency (fT) of 30 MHz, and an output capacitance (Cob) of 1 pF. The component supports a junction temperature up to 150 °C and is supplied in the CPT3 package.

Single Bipolar Transistors Feature Summary

• Epitaxial planar NPN silicon structure designed for general-purpose amplification and switching applications.
• Low collector-emitter saturation voltage characteristic enabling efficient operation under high load conditions.
• Complementary design pairing with specific PNP transistors such as the 2SB1182 and 2SB1240.

Single Bipolar Transistors Applications

• General-use electronic equipment
• Audio visual equipment
• Office automation equipment
• Communication devices

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against official documentation to confirm packaging specifications. The 'TLR' designation indicates tape and reel packaging with a basic ordering unit of 2500 pieces. Confirm that the hFE classification matches the required application constraints, as values are categorized into specific ranges within the datasheet.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring a 32 V NPN transistor capable of handling 2 A continuous current. Ensure the thermal management strategy accommodates the specified power dissipation limits. Verify compatibility with complementary PNP devices if push-pull configurations are utilized. Check that the operating frequency remains within the 30 MHz transition frequency limit.

Single Bipolar Transistors Part Context

This part belongs to the ROHM medium power transistor family, specifically engineered for general consumer electronics. It serves as a standard solution for amplification tasks where moderate voltage and current handling are required. The device is intended for use in non-radiation tolerant environments and general-purpose industrial or commercial equipment.

Single Bipolar Transistors Replacement Considerations

The 2SD1862 is documented as a similar level replacement with the same package type. Other compatible components include the 2SD1766 and MP6X2. Verify pinout and electrical parameters before substitution.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is 32 V.

Does the device support radiation tolerance?

No, the product is not designed to be radiation tolerant.

What is the typical output capacitance value?

The typical output capacitance (Cob) is 1 pF under the specified test conditions.