2SD1766T100P

Single Bipolar Transistors Overview

The 2SD1766T100P is a medium power NPN silicon epitaxial planar transistor manufactured by ROHM Semiconductor. It operates with a collector-emitter voltage of 32V and a continuous collector current of 2A. The device features a low collector-emitter saturation voltage, typically 0.5V at 2A/0.2A drive conditions. Electrical characteristics include a DC current gain ranging from 120 to 390 and a transition frequency of 100MHz. Power dissipation capabilities vary based on mounting configuration, reaching up to 10W when mounted on a ceramic board. The component utilizes the MPT3 package.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance
• Epitaxial planar structure utilizing NPN silicon technology
• Designed to complement specific PNP transistors in push-pull configurations

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Switching applications requiring medium power handling
• Audio visual equipment driver stages
• Office automation equipment control circuits

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against official documentation before procurement. Confirm that the T100 designation corresponds to the required tape and reel packaging quantity. Ensure compatibility with existing PCB footprints designated for the MPT3 package type. Cross-reference the hFE binning requirements with circuit design specifications to guarantee proper gain selection.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a 32V NPN transistor with moderate current handling capabilities. Evaluate thermal management strategies carefully, as power dissipation ratings depend heavily on the specific mounting surface area and heat sinking method employed. Verify that the transition frequency meets the signal bandwidth requirements of the intended application circuit.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1766 series of medium power transistors produced by ROHM Semiconductor. The series includes variants such as the 2SD1758 and 2SD1862, which share similar electrical profiles but differ in specific power dissipation limits and safe operating area boundaries. These components are designed for general-use electronic equipment within standard temperature ranges.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SB1188, 2SB1182, and 2SB1240 as complementary PNP devices. No other direct substitute part numbers are documented in the provided source material.