Single Bipolar Transistors 2SD1766T100R product image

2SD1766T100R

$0.78
  • Description:TRANS NPN 32V 2A MPT3
  • Series:-

SKU:f8c811c88013 Category: Brand:

  
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2SD1766T100R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 32V 2A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1766T100R

  • Description:TRANS NPN 32V 2A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 500mA, 3V
  • Power - Max:2 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1766T100R

2SD1766T100R

Single Bipolar Transistors Overview

The 2SD1766T100R is an NPN silicon epitaxial planar transistor designed for medium power applications. It features a collector-emitter voltage of 32V and a continuous collector current rating of 2A. The device achieves a typical low saturation voltage of 0.5V at 2A/0.2A drive conditions. Electrical characteristics include a transition frequency of 100MHz and a DC current gain ranging from 120 to 390. Power dissipation reaches 0.5W on standard PCBs and up to 10W with direct case cooling.

Single Bipolar Transistors Feature Summary

  • Epitaxial planar NPN silicon construction
  • Low collector-emitter saturation voltage
  • High DC current transfer ratio

Single Bipolar Transistors Applications

  • General-purpose amplification in consumer electronics
  • Driver stages for audio-visual equipment
  • Office automation circuitry
  • Communication device signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning code (e.g., T100) required for your design, as gain ranges vary by suffix. Confirm RoHS compliance status through official manufacturer channels prior to finalizing orders. Ensure component sourcing aligns with the recommended design guidelines provided in the datasheet.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring moderate current handling with low saturation losses. Compare against complementary PNP types like the 2SB1188 for push-pull configurations. Evaluate thermal management requirements based on the specified power dissipation limits under various mounting conditions.

Single Bipolar Transistors Part Context

This part belongs to ROHM's medium power transistor family, sharing specifications with the 2SD1758 and 2SD1862 models. These devices are engineered for general-use electronic equipment such as office automation and communication devices. They are not intended for radiation-tolerant or high-reliability safety-critical applications.

Single Bipolar Transistors Replacement Considerations

The 2SD1758 and 2SD1862 are electrically equivalent alternatives within the same package. For complementary PNP operation, consider the 2SB1188, 2SB1182, or 2SB1240.

2SD1766T100R2SD1766T100R
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