2SD1781KT146R

Single Bipolar Transistors Overview

The 2SD1781KT146R is a medium power NPN bipolar junction transistor manufactured by Rohm Semiconductor. It features a collector-emitter voltage (VCEO) of 32 V and a maximum continuous collector current (IC) of 800 mA. The device operates with a power dissipation rating of 200 mW at 25°C ambient temperature, extending to a peak pulse current of 1.5 A for 100 ms. Electrical characteristics include a DC current gain (hFE) ranging from 120 to 390 and a transition frequency (fT) of 150 MHz. The saturation voltage (VCE(sat)) is typically 100 mV under high drive conditions.

Single Bipolar Transistors Feature Summary

• Very low collector-emitter saturation voltage for efficient switching
• High current capacity within a compact surface-mount package
• Designed to complement the 2SB1197K PNP counterpart

Single Bipolar Transistors Applications

• Power amplifier circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm packaging details and marking codes. Ensure that the procurement channel provides original documentation matching the 2SD1781K series specifications. Confirm RoHS compliance status and storage conditions prior to integration into production lines.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring moderate power handling in a small footprint. The complementary nature with the 2SB1197K facilitates push-pull configurations. Evaluate thermal management requirements carefully due to the 200 mW dissipation limit in the SOT-346 package.

Single Bipolar Transistors Part Context

This transistor belongs to the 2SD1781K series of medium power transistors. It utilizes the SMT3 (SOT-346) surface mount package. The device is designed for general-purpose amplification and switching tasks where space constraints are critical but higher current handling than standard signal transistors is required.

Single Bipolar Transistors Replacement Considerations

The 2SB1197K is documented as a complementary part. Verify pinout compatibility and electrical parameters before substituting with other NPN transistors offering similar voltage and current ratings.

Single Bipolar Transistors FAQ

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 100 mV when measured at IC=500mA and IB=50mA.

Is this component suitable for automotive applications?

No, the datasheet notice specifies that products are not intended for use in devices requiring extremely high reliability such as car equipment without prior consultation.

What is the maximum collector-base breakdown voltage?

The absolute maximum rating for collector-base voltage (VCBO) is 40 V.