Single Bipolar Transistors 2SD1803T-E product image

2SD1803T-E

$0.32
  • Description:TRANS NPN 50V 5A TP
  • Series:-

SKU:2c453e3a6273 Category: Brand:

  
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2SD1803T-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 5A TP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1803T-E

  • Description:TRANS NPN 50V 5A TP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 150mA, 3A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:180MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package:TP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1803T-E

2SD1803T-E

Single Bipolar Transistors Overview

The onsemi 2SD1803T-E is a single NPN silicon bipolar junction transistor housed in the TP (TO-251) surface-mount package. It supports a maximum collector current of 5 A and a collector-to-emitter voltage of 50 V. The device features a gain-bandwidth product of 180 MHz and a collector dissipation rating of 1 W at 25°C ambient temperature, extending to 20 W with case mounting. Electrical characteristics include a collector cutoff current of 1 μA and a DC current gain ranging from 70 to 400 based on ranking.

Single Bipolar Transistors Feature Summary

  • Low collector-to-emitter saturation voltage for efficient switching
  • High current capability combined with high transition frequency
  • Excellent linearity of DC current gain across operating ranges
  • Fast switching speed suitable for high-frequency applications

Single Bipolar Transistors Applications

  • Relay drivers
  • High-speed inverters
  • Converters
  • General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping format. The 'E' suffix indicates lead-free construction without halogen-free requirements. Confirm availability status as distribution channels may list obsolete or discontinued variants. Ensure the component matches the required hFE rank for the intended circuit design.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage and fast switching are critical for high-current loads. The TP package offers a compact form factor for space-constrained designs. Evaluate thermal management requirements carefully, as power dissipation drops significantly below case-mounted ratings. Verify that the 50 V breakdown voltage aligns with the maximum circuit voltages.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1803 series of NPN transistors manufactured by onsemi. It is functionally paired with the 2SB1203 PNP transistor within the same datasheet specification. The series is designed for general-purpose high-current switching tasks requiring reliable performance in compact surface-mount configurations.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer's obsolescence notices for potential end-of-life status. Official substitutes may include the 2SD1803T-H variant for halogen-free requirements or the 2SD1803S-TL-E for tape-and-reel packaging.

Single Bipolar Transistors FAQ

What is the maximum collector current for the 2SD1803T-E?

The maximum continuous collector current is 5 A.

Does the 2SD1803T-E meet halogen-free standards?

No, the 'E' suffix indicates lead-free construction only. The 'H' suffix denotes both lead-free and halogen-free compliance.

What is the typical gain-bandwidth product?

The typical gain-bandwidth product is 180 MHz at a collector current of 1 A and VCE of 5 V.

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