2SD1815T-H

Single Bipolar Transistors Overview

The 2SD1815T-H is an NPN silicon bipolar junction transistor manufactured by onsemi. It features a collector-emitter voltage of 100 V and a continuous collector current of 3 A. The device operates with a maximum power dissipation of 1 W at 25°C case temperature, reaching up to 2 W under specific thermal conditions. It utilizes the TP package (TO-251/SC-64) and complies with halogen-free standards. Key electrical characteristics include a DC current gain ranging from 140 to 400 depending on the rank, a gain-bandwidth product of approximately 180 MHz, and low saturation voltages suitable for high-current switching.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient conduction
• Excellent linearity of hFE across operating ranges
• High transition frequency (fT) supporting fast switching applications
• Small-sized package design enabling compact and slim equipment construction

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• Converters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified suppliers. Confirm the presence of the 'H' suffix indicates halogen-free compliance as documented in the official datasheet. Ensure the TP package type matches the required PCB footprint. Check for any end-of-life notices or production change notifications that may affect long-term availability or specifications.

Single Bipolar Transistors Selection Notes

Select this NPN transistor when designing circuits requiring 100 V blocking capability and 3 A continuous current handling. The TO-251 package is appropriate for through-hole mounting where space constraints allow. Consider the hFE ranking requirements for specific gain needs. Evaluate thermal management strategies to maintain junction temperatures within the specified 150°C limit during operation.

Single Bipolar Transistors Part Context

This component belongs to the 2SD1815 series of bipolar transistors produced by onsemi. It is part of a family that includes complementary PNP devices like the 2SB1215. The series is designed for general-purpose high-current switching tasks. The T-H designation specifies the through-hole TP package variant with halogen-free manufacturing processes.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other NPN transistors with similar 100V, 3A ratings and TO-251 packaging. Verify pinout compatibility and electrical parameters such as VCE(sat) and hFE before substitution. Consult onsemi documentation for recommended cross-reference parts if exact model availability is limited.