2SD1828

Single Bipolar Transistors Overview

The onsemi 2SD1828 is a power NPN bipolar junction transistor designed for high-current switching applications. It features a maximum collector current of 3 A and a collector-emitter breakdown voltage of 100 V. The device utilizes a flange mount package with an isolated case connection, suitable for direct heatsinking. Key electrical limits include a collector-base voltage of 100 V, an emitter-base voltage of 5 V, and a maximum power dissipation of 20 W. The minimum DC current gain (hFE) is specified at 1500, supporting efficient drive requirements.

Single Bipolar Transistors Feature Summary

• High DC current gain capability for efficient base drive
• Isolated metal flange case for thermal management
• Integrated bias resistor network for simplified circuit design

Single Bipolar Transistors Applications

• Power switching circuits requiring high gain
• Industrial motor control interfaces
• High-voltage relay driver stages

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer source, as historical data indicates Sanyo Semiconductor origins before corporate restructuring. Confirm the presence and value of the built-in bias resistor if required by the schematic, as this distinguishes it from standard discrete transistors. Ensure the flange mount package compatibility matches the existing thermal interface in the target assembly.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN switch is needed with integrated base resistance to reduce external component count. The 100 V rating suits medium-voltage applications, while the 3 A current capacity supports moderate load driving. The flange mount form factor is critical for designs requiring robust thermal conduction through the mounting surface rather than PCB copper area alone.

Single Bipolar Transistors Part Context

This part belongs to the class of power bipolar transistors characterized by high current handling and integrated biasing networks. Unlike standard discrete devices, the inclusion of a built-in resistor simplifies the drive stage design. The flange mount packaging differentiates it from surface-mount or through-hole tube variants found in lower-power signal transistor families.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the 3 A current, 100 V voltage, and integrated bias resistor configuration. Standard 2SD1828 equivalents without the internal resistor are not functionally interchangeable without schematic modification.