2SD1857TV2P

Single Bipolar Transistors Overview

The 2SD1857TV2P is an NPN silicon power transistor manufactured by ROHM Semiconductor. It features a collector-emitter breakdown voltage of 120V and a continuous collector current rating of 2A. The device exhibits a transition frequency (fT) of 80MHz and a typical collector output capacitance of 20pF at VCB=10V. Maximum power dissipation reaches 1W on a PCB, with a junction temperature limit of +150°C. It is supplied in a TV2 surface-mount package.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for robust operation
• Low collector output capacitance for high-frequency performance
• High transition frequency suitable for switching applications

Single Bipolar Transistors Applications

• General-purpose power amplification circuits
• Switching regulators and converters
• Audio visual equipment drivers
• Office automation equipment interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TV2 to confirm the tape-and-reel packaging quantity of 2500 pieces. Ensure the required hFE bin (Q or R) matches the design specifications before finalizing the purchase order. Confirm RoHS compliance status through official documentation.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring 120V blocking capability and 2A current handling in a compact SMD form factor. Consider the low output capacitance for high-speed switching requirements. Verify thermal management capabilities against the 1W dissipation limit based on the target PCB copper area.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1857 series of NPN power transistors from ROHM. It serves as a complementary device to the PNP 2SB1236. The TV2 designation indicates a specific surface-mount package configuration used for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly states that the 2SD1857 complements the 2SB1236. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is 120V.

How is the DC current gain classified?

The DC current gain (hFE) is classified into two bins: Q (120 to 270) and R (180 to 390).

What is the typical collector output capacitance?

The typical collector output capacitance (Cob) is 20pF when measured at VCB = 10V.