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2SD1936T-SSH is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 0.8A 15V. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SD1936T-SSH
- Description：BIP NPN 0.8A 15V
- Series：*
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SD1936T-SSH
Single Bipolar Transistors Overview
The onsemi 2SD1936T-SSH is a silicon NPN low-power high-frequency bipolar junction transistor (BJT). It features a collector-base voltage of 12V and a collector-emitter voltage of 2.0V. The device supports a maximum continuous collector current of 0.8A with an absolute maximum power dissipation of 300mW. It exhibits a maximum output capacitance of 10pF, suitable for compact switching applications.
Single Bipolar Transistors Feature Summary
- NPN silicon construction optimized for low-power operations
- High-frequency performance characteristics for rapid signal processing
- Fast switching speed capabilities for efficient circuit control
Single Bipolar Transistors Applications
- General-purpose switching circuits
- Low-voltage amplifier stages
- Consumer electronic device control systems
Single Bipolar Transistors Procurement Notes
Verify the specific suffix 'SSH' against official onsemi documentation to confirm exact binning or tape-and-reel specifications. Ensure the component matches the standard Sanyo Semiconductor origin data provided in distributor listings. Confirm RoHS compliance status through official material composition documents before integration into final assemblies.
Single Bipolar Transistors Selection Notes
Select this component for designs requiring a small-signal NPN transistor with low voltage ratings. The 0.8A current capacity and 300mW power dissipation define its thermal limits. Consider the 10pF output capacitance for high-speed signal integrity requirements in compact form factors.
Single Bipolar Transistors Part Context
This part belongs to the broader category of discrete semiconductor products, specifically within the bipolar junction transistor segment. Originally developed by Sanyo Semiconductor, it is now distributed under the onsemi portfolio. It serves as a fundamental active element for amplification and switching tasks in modern electronics.
Single Bipolar Transistors Replacement Considerations
Consult official cross-reference lists for direct substitutes. Generic NPN transistors may not match the specific high-frequency or low-voltage characteristics required for this application without thorough validation.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
