Single Bipolar Transistors 2SD1991ARA product image

2SD1991ARA

$0.06
  • Description:TRANS NPN 50V 0.1A MT-1-A1
  • Series:-

SKU:6978041843ba Category: Brand:

  
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2SD1991ARA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 50V 0.1A MT-1-A1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1991ARA

  • Description:TRANS NPN 50V 0.1A MT-1-A1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:210 @ 2mA, 10V
  • Power - Max:400 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:MT-1-A1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1991ARA

2SD1991ARA

Single Bipolar Transistors Overview

The Panasonic 2SD1991ARA is a silicon NPN epitaxial planar transistor designed for general amplification. It operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA, reaching a peak of 200 mA. The device dissipates up to 400 mW at 25°C and features a transition frequency of 150 MHz. It utilizes the MT-1-A1 package and offers a forward current transfer ratio ranging from 160 to 460 depending on the specific rank.

Single Bipolar Transistors Feature Summary

  • High forward current transfer ratio (hFE) for efficient signal amplification
  • Low collector-emitter saturation voltage (VCE(sat)) to minimize power loss
  • Radial taping supply method for automated insertion

Single Bipolar Transistors Applications

  • General amplification circuits
  • Office equipment
  • Communications equipment
  • Measuring instruments
  • Household appliances

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against official documentation to confirm packaging specifications. Confirm the current lifecycle status, as this component may be classified under maintenance or discontinued stages. Ensure compliance with RoHS directives and verify that the intended application falls within standard electronic equipment parameters rather than specialized safety-critical systems.

Single Bipolar Transistors Selection Notes

Select this component when a low-saturation voltage NPN transistor is required for general-purpose amplification. Consider the MT-1-A1 radial package if through-hole mounting is necessary. Evaluate the hFE rank requirements based on the specific gain needed for the circuit design. Ensure the operating environment remains within the specified temperature range and absolute maximum ratings.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD1991A series of silicon NPN transistors. It is functionally complementary to the 2SB1320A PNP transistor. The series is engineered for standard applications in consumer electronics and industrial control equipment, providing reliable performance for linear and switching operations within its rated electrical limits.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference data for verified substitutes. Verify pinout compatibility and electrical parameter alignment before implementation.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is 50 V.

Does the 2SD1991ARA support automatic insertion?

Yes, it allows supply with radial taping, facilitating automatic insertion processes.

What is the typical transition frequency?

The transition frequency (fT) is typically 150 MHz under standard test conditions.

2SD1991ARA2SD1991ARA
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