2SD2129,LS4ALPSQ(M

Single Bipolar Transistors Overview

The Toshiba 2SD2129 is a silicon NPN triple diffused Darlington transistor designed for high-power switching applications. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 3 A, with a pulse current capacity of 5 A. The device provides a minimum DC current gain (hFE) of 1000 at 3 A and maintains a low saturation voltage of 2.0 V maximum under full load conditions. Packaged in the SC-67 flange mount configuration, it offers a collector power dissipation of 20 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• High DC current gain capability suitable for direct drive applications
• Low collector-emitter saturation voltage for efficient switching
• Triple diffused construction for robust performance

Single Bipolar Transistors Applications

• Hammer drive circuits
• Pulse motor drive systems
• General high-power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with the manufacturer or authorized distributor, as the datasheet indicates this requires specific product-by-product confirmation. Ensure the ordering suffix matches the required lead-free finish if applicable. Confirm that the SC-67 package dimensions align with the target PCB footprint and thermal management requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and low saturation voltage are critical for driving loads such as hammers or motors. The 100 V breakdown voltage supports standard industrial control voltages. Consider the SC-67 package for effective heat sinking, as the collector connects to the mounting base. Evaluate the safe operating area curves to ensure reliability under varying thermal conditions and duty cycles.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's line of silicon NPN Darlington transistors. It utilizes a triple diffused process to achieve high current handling capabilities. The device is intended for general electronics applications but is not recommended for safety-critical systems like medical or transportation equipment without additional design safeguards.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are documented in the provided source material.