2SD2150T100R

Single Bipolar Transistors Overview

The 2SD2150T100R is a low-frequency NPN silicon epitaxial planar transistor manufactured by ROHM Semiconductor. It features a collector-emitter breakdown voltage of 20V and a continuous collector current rating of 3A, with a peak pulse current capability of 5A. The device offers a typical DC current gain (hFE) range of 180 to 390 for the 'R' suffix classification. Key electrical characteristics include a maximum collector-base breakdown voltage of 40V and a transition frequency of 290MHz. It operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance.
• Excellent DC current gain characteristics across operating ranges.
• Designed as a complementary component to the 2SB1424 PNP transistor.

Single Bipolar Transistors Applications

• General-purpose low-frequency amplification circuits
• Switching applications in consumer electronics
• Complementary pairs in audio-visual equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'R' against official ROHM documentation to confirm the hFE binning range of 180 to 390. Ensure that the MPT3 package dimensions align with your PCB footprint requirements. Confirm RoHS compliance status through the manufacturer's latest datasheet revision before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when a low VCE(sat) NPN transistor is required to complement a 2SB1424 PNP device. Consider the 20V collector-emitter voltage limit and 3A continuous current rating for load matching. Evaluate the thermal dissipation capabilities relative to the intended mounting substrate, as power ratings depend on adequate heat sinking.

Single Bipolar Transistors Part Context

This part belongs to the 2SD2150 series of low-voltage, high-current NPN transistors from ROHM. It utilizes an epitaxial planar structure optimized for general-use electronic equipment. The device is packaged in the MPT3 (SC-62) surface-mount format, designed for automated assembly processes in standard manufacturing environments.

Single Bipolar Transistors Replacement Considerations

Officially recommended replacement parts include 2SCR552P5 and 2SCR552PHZG. These alternatives share the same pinout and MPT3 package configuration. Verify that the replacement devices meet the specific voltage and current requirements of the original circuit design.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SD2150T100R?

The 'R' suffix indicates a DC current gain (hFE) classification ranging from 180 to 390.

Is this transistor suitable for high-frequency RF applications?

No, it is classified as a low-frequency transistor with a transition frequency of 290MHz, intended for general-purpose use rather than RF operations.

What is the maximum collector-emitter voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is rated at 20V.