Single Bipolar Transistors 2SD2161-AZ product image

2SD2161-AZ

$0.82
  • Description:TRANS NPN DARL 100V 5A MP-45F
  • Series:-

SKU:fab387bad8e9 Category: Brand:

  
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2SD2161-AZ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS NPN DARL 100V 5A MP-45F. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD2161-AZ

  • Description:TRANS NPN DARL 100V 5A MP-45F
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 2mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 2A, 2V
  • Power - Max:2 W
  • Frequency - Transition:30MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:MP-45F
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD2161-AZ

2SD2161-AZ

Single Bipolar Transistors Overview

The 2SD2161-AZ is an NPN silicon epitaxial planar transistor manufactured by Renesas Electronics. It is designed as a Darlington power transistor for low-frequency power amplifiers and low-speed switching applications. Key electrical parameters include a collector-emitter breakdown voltage of 100V minimum, a high DC current gain of 2000 minimum at VCE=2V and IC=2A, and a maximum collector saturation voltage of 1.5V at IC=2A and IB=2mA.

Single Bipolar Transistors Feature Summary

  • High DC current gain capability suitable for sensitive drive circuits
  • Low collector saturation voltage for efficient power handling
  • Designed specifically for low-frequency power amplifier stages

Single Bipolar Transistors Applications

  • Low-frequency power amplifiers
  • Low-speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the manufacturer source carefully, as the 2SD2161 part number appears in documentation from multiple entities including NEC and Inchange Semiconductor. Confirm that the specific suffix -AZ corresponds to the Renesas Electronics variant with the stated electrical characteristics before procurement. Ensure the component matches the required NPN Darlington configuration.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required for low-frequency power amplification or slow switching tasks. The device offers a balance of high current gain and low saturation voltage. Consider thermal management requirements due to the power dissipation inherent in Darlington configurations during operation.

Single Bipolar Transistors Part Context

This component belongs to the family of silicon NPN epitaxial planar transistors produced by Renesas Electronics. It serves as a discrete semiconductor solution for analog and power control circuits. The device is distinct from general-purpose small-signal transistors due to its specific design for higher current handling and lower frequency power applications.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.

2SD2161-AZ2SD2161-AZ
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