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2SD2167T100P is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 31V 2A MPT3. Review the specifications below when checking this part for your BOM.
The 2SD2167T100P is an NPN silicon power transistor manufactured by ROHM Semiconductor, designed for applications requiring robust reverse surge protection. It features a built-in Zener diode between the collector and base terminals to clamp voltage spikes. The device supports a continuous collector current of 2A and operates with a collector-emitter breakdown voltage of 31V. Key electrical parameters include a DC current gain (hFE) ranging from 56 to 270 and a transition frequency (fT) up to 25 MHz. It is housed in the MPT3 surface-mount package.
Verify component authenticity through authorized ROHM distributors. Confirm the specific hFE bin code required for your application, as the T100 suffix indicates a basic ordering unit of 1000 pieces within the MPT3 package. Ensure thermal management aligns with the specified power dissipation limits on appropriate PCB layouts.
Select this component when circuit design demands integrated reverse surge suppression without external discrete Zener diodes. It is suitable for low-voltage, medium-current applications where space constraints favor the compact MPT3 surface-mount form factor. Evaluate the 31V breakdown rating against maximum operating voltages to ensure adequate safety margins.
This part belongs to ROHM's line of power transistors featuring integrated protection mechanisms. The MPT3 package provides a compact footprint suitable for dense surface-mount assemblies. It serves as a specialized solution for protecting sensitive downstream components from voltage transients common in driver and switching environments.
Direct pin-compatible replacements must be verified against the MPT3 package dimensions and the specific 31V/2A ratings. Standard NPN transitors lacking the internal Zener diode will not provide equivalent surge protection and require external circuit modifications.
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