Single Bipolar Transistors 2SD2167T100P product image

2SD2167T100P

  • Description:TRANS NPN 31V 2A MPT3
  • Series:-

SKU:fa728514cf71 Category: Brand:

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2SD2167T100P is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 31V 2A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD2167T100P

  • Description:TRANS NPN 31V 2A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):31 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 200mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:82 @ 500mA, 3V
  • Power - Max:2 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD2167T100P

2SD2167T100P

Single Bipolar Transistors Overview

The 2SD2167T100P is an NPN silicon power transistor manufactured by ROHM Semiconductor, designed for applications requiring robust reverse surge protection. It features a built-in Zener diode between the collector and base terminals to clamp voltage spikes. The device supports a continuous collector current of 2A and operates with a collector-emitter breakdown voltage of 31V. Key electrical parameters include a DC current gain (hFE) ranging from 56 to 270 and a transition frequency (fT) up to 25 MHz. It is housed in the MPT3 surface-mount package.

Single Bipolar Transistors Feature Summary

  • Built-in Zener diode between collector and base for integrated overvoltage protection
  • Low voltage dispersion characteristics for the internal Zener diode
  • Enhanced protection against reverse power surges caused by low loads

Single Bipolar Transistors Applications

  • Driver circuits requiring reverse polarity or surge protection
  • Power switching applications with potential inductive load kickback
  • General-purpose amplification stages needing integrated clamping

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized ROHM distributors. Confirm the specific hFE bin code required for your application, as the T100 suffix indicates a basic ordering unit of 1000 pieces within the MPT3 package. Ensure thermal management aligns with the specified power dissipation limits on appropriate PCB layouts.

Single Bipolar Transistors Selection Notes

Select this component when circuit design demands integrated reverse surge suppression without external discrete Zener diodes. It is suitable for low-voltage, medium-current applications where space constraints favor the compact MPT3 surface-mount form factor. Evaluate the 31V breakdown rating against maximum operating voltages to ensure adequate safety margins.

Single Bipolar Transistors Part Context

This part belongs to ROHM's line of power transistors featuring integrated protection mechanisms. The MPT3 package provides a compact footprint suitable for dense surface-mount assemblies. It serves as a specialized solution for protecting sensitive downstream components from voltage transients common in driver and switching environments.

Single Bipolar Transistors Replacement Considerations

Direct pin-compatible replacements must be verified against the MPT3 package dimensions and the specific 31V/2A ratings. Standard NPN transitors lacking the internal Zener diode will not provide equivalent surge protection and require external circuit modifications.

2SD2167T100P2SD2167T100P

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