2SD2257(Q,M)

Description：TRANS NPN 100V 3A TO-220NIS
Series：-

SKU:2d38e41d905f Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SD2257(Q,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 100V 3A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD2257(Q,M)

Description：TRANS NPN 100V 3A TO-220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max)：10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：2000 @ 2A, 2V
Power - Max：2 W
Frequency - Transition：-
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220NIS
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD2257(Q,M)

2SD2257(Q,M)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SD2257(Q,M) is a silicon NPN epitaxial transistor designed for high-power switching applications. It features a collector-emitter voltage of 100 V, a continuous collector current of 3 A, and a power dissipation rating of 20 W at 25°C case temperature. The device provides a minimum DC current gain (hFE) of 2000 at 1 A and 2 A, with a maximum collector-emitter saturation voltage of 1.5 V under specified test conditions.

Single Bipolar Transistors Feature Summary

High DC current gain capability
Low collector-emitter saturation voltage
Suitable for high-power switching operations

Single Bipolar Transistors Applications

Hammer drive systems
Pulse motor drive circuits
General high-power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm package type and lead finish specifications. Confirm RoHS compliance status directly with the manufacturer or authorized distributor as requirements vary by production batch. Ensure the component meets the absolute maximum ratings for your specific thermal and electrical operating conditions before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high current handling and low saturation losses are required in switching designs. Consider the complementary 2SB1495 PNP transistor if a matched pair is needed for push-pull configurations. Evaluate the safe operating area curves to ensure reliable performance under pulsed load conditions and varying ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's line of silicon NPN epitaxial transistors engineered for robust power switching tasks. It utilizes a JEDEC SC-67 compatible package structure. The device is specifically characterized for applications demanding high gain and efficient conduction during active states.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SB1495 as the complementary PNP counterpart. Verify pinout compatibility and matching electrical characteristics when substituting components in existing circuit designs.