2SD2391T100Q

Overview

The 2SD2391T100Q is an NPN medium power transistor manufactured by ROHM Semiconductor, housed in a surface-mount SOT-89 package. It features a collector-emitter voltage rating of 60V and a continuous collector current capacity of 2A. The device exhibits a transition frequency (fT) of 210MHz and a typical saturation voltage of 130mV at IC/IB = 1A/50mA. Power dissipation is rated at 2W when mounted on a ceramic board measuring 40x40x0.7mm.

Feature Summary

• Low saturation voltage for efficient switching performance
• High collector current capability suitable for medium power applications
• Surface-mount SOT-89 packaging for compact circuit integration

Applications

• General-purpose switching circuits
• Medium power amplifier stages
• Driver circuits for loads requiring high current gain

Procurement Notes

Verify the specific suffix T100Q to confirm reel packaging and tape specifications. Ensure thermal management aligns with the 2W dissipation limit on appropriate substrates. Cross-reference pinout configurations against schematic requirements to prevent installation errors during assembly processes.

Selection Notes

Select this component for designs requiring robust NPN switching with low voltage drop. Consider the 60V breakdown limit and 2A current ceiling relative to load demands. Evaluate thermal resistance constraints if operating near maximum power dissipation limits without adequate heatsinking.

Part Context

This part belongs to ROHM's medium power transistor series, designed for general electronic applications. It complements other NPN devices in the portfolio offering similar voltage ratings but varying current or package types. The SOT-89 form factor distinguishes it from through-hole alternatives while maintaining comparable electrical characteristics.

Replacement Considerations

• 2SD2391