2SD245300L

2SD245300L

  • Description:TRANS NPN 60V 2A U-G2
  • Series:-

SKU:3b595767f686 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 60V 2A U-G2
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 2A
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:500 @ 500mA, 4V
  • Power - Max:1 W
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:U-G2
  • Grade:-
  • Qualification:-

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2SD245300L

Overview

The Panasonic 2SD2453 is a silicon NPN triple diffusion planar power transistor designed for high current transfer ratio and power amplification. It features an EIAJ SC-63 U-G2 package with a collector connected to the heat sink. Key electrical ratings include a maximum collector-emitter voltage of 60 V, a continuous collector current of 2 A, and a peak collector current of 4 A. The device supports a collector power dissipation of 10 W at 25°C and operates up to a junction temperature of 150°C. Forward current transfer ratios range from 500 to 2500 depending on the rank classification.

Feature Summary

  • High forward current transfer ratio (hFE) for efficient signal control
  • Low collector-emitter saturation voltage (VCE(sat)) to minimize power loss
  • Triple diffusion planar structure for robust performance

Applications

  • General electronic equipment power amplification
  • Office equipment driver circuits
  • Communications equipment output stages
  • Household appliance motor or relay drivers

Procurement Notes

Verify the specific hFE rank (Q, R, or S) required for your design, as gain varies significantly between classifications. Confirm the package type matches the U-G2 footprint. Check the official Panasonic semiconductor website for the latest lifecycle status, as this component may be in maintenance or discontinued phases. Ensure compliance with RoHS directives if applicable to your manufacturing process.

Selection Notes

Select the appropriate hFE rank based on the required base drive current and desired gain stability. Consider thermal management requirements, as the 10 W dissipation rating assumes a 25°C ambient temperature without a heatsink. Verify that the 60 V collector-emitter voltage provides sufficient margin for your circuit's operating conditions. Evaluate the transition frequency characteristics if high-speed switching is involved.

Part Context

This component belongs to Panasonic's series of silicon NPN power transistors utilizing triple diffusion planar technology. These devices are engineered for applications requiring reliable power handling and high current gain. The U-G2 package facilitates direct mounting to printed circuit boards or external heat sinks, supporting efficient thermal dissipation for continuous operation in standard electronic environments.

Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing requires matching key parameters such as voltage ratings, current capacity, package dimensions, and thermal characteristics.

2SD245300L2SD245300L

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