2SD2528

Description：TRANS NPN 60V 5A TO-220D-A1
Series：-

SKU:24914a8c3476 Category: Single Bipolar Transistors Brand: Panasonic Electronic Components

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 60V 5A TO-220D-A1
Series：-
Mfr：Panasonic Electronic Components
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：5:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 100mA, 4A
Current - Collector Cutoff (Max)：100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：500 @ 1A, 4V
Power - Max：2 W
Frequency - Transition：30MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Supplier Device Package：TO-220D-A1
Grade：-
Qualification：-

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2SD2528

Overview

The Panasonic 2SD2528 is a silicon NPN epitaxial planar power transistor designed for power and high-current amplification. It features a TO-220D-A1 package with a collector connected to the case for direct heat sink mounting. Key electrical ratings include a collector-emitter voltage of 60 V, a continuous collector current of 5 A, and a peak collector current of 10 A. The device offers a forward current transfer ratio (hFE) ranging from 500 to 2000 and a collector power dissipation of 40 W at 25°C.

Feature Summary

High forward current transfer ratio with satisfactory linearity
Full-pack package enabling direct installation to a heat sink using one screw

Applications

Power amplification circuits
High-current amplification applications

Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels. Confirm RoHS compliance status and check the latest product lifecycle information on the official Panasonic Semiconductor website, as this model may be subject to maintenance or discontinuation plans.

Selection Notes

Select this component when high current handling up to 5 A and robust thermal management are required. The TO-220D-A1 package facilitates efficient heat dissipation via direct mounting. Ensure the design accommodates the specified collector-base voltage of 80 V and junction temperature limits of 150°C.

Part Context

This component belongs to the Panasonic power transistor family, specifically engineered for linear amplification tasks. It utilizes an epitaxial planar process to achieve high gain and reliable performance in standard electronic equipment applications such as audio and communication devices.