2SD2654TLV

$0.51

Description：TRANS NPN 50V 0.15A EMT3
Series：-

SKU:e73f1ed39b98 Category: Single Bipolar Transistors Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 50V 0.15A EMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：150 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：300nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：820 @ 1mA, 5V
Power - Max：150 mW
Frequency - Transition：250MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-75, SOT-416
Supplier Device Package：EMT3
Grade：-
Qualification：-

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2SD2654TLV

Overview

The 2SD2654TLV is a general-purpose NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 150 mA. The device offers a high DC current gain ranging from 560 to 2700 depending on the classification rank, with a transition frequency of 250 MHz. Key electrical characteristics include a low collector-emitter saturation voltage of 300 mV at specified currents and an emitter-base breakdown voltage of 12 V. Power dissipation is rated at 150 mW, and it operates within a junction temperature range up to 150 °C.

Feature Summary

High DC current gain for efficient signal amplification
Low saturation voltage to minimize power loss during switching
High emitter-base voltage tolerance for robust operation

Applications

Low frequency amplifier circuits
General purpose driver applications

Procurement Notes

Verify the specific hFE ranking (U, V, or W) required for your design, as the datasheet defines distinct gain ranges for each class. Confirm that the EMT3 package dimensions align with your PCB footprint. Ensure storage conditions remain within recommended humidity and temperature limits to maintain solderability before mounting.

Selection Notes

Select this component when a small-signal NPN transistor with moderate voltage handling and high gain is needed. The 250 MHz transition frequency supports low-frequency amplification tasks. Consider the 150 mW power dissipation limit and derating requirements based on ambient operating temperatures during circuit design.

Part Context

This part belongs to the 2SD2654 series of general-purpose transistors. It utilizes the EMT3 surface-mount package, also identified as SOT-416 or SC-75A in industry standards. The device is designed for standard electronic equipment applications such as audio, office automation, and telecommunications systems.