2SD2662T100

2SD2662T100

$0.80
  • Description:TRANS NPN 30V 1.5A MPT3
  • Series:-

SKU:ba884902a04f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 30V 1.5A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:350mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:270 @ 100mA, 2V
  • Power - Max:2 W
  • Frequency - Transition:330MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

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2SD2662T100

Overview

The 2SD2662T100 is a single NPN bipolar junction transistor manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an MPT3 (TO-243AA) surface-mount package. The device supports a maximum collector current of 1.5 A and a collector-emitter voltage of 30 V. Key electrical parameters include a transition frequency of 330 MHz, a power dissipation rating of 2 W, and a DC current gain ranging from 270 to higher values at specified test conditions. The component operates within a temperature range up to +150°C.

Feature Summary

  • High-speed switching capability with a transition frequency of 330 MHz
  • Low saturation voltage for efficient power handling
  • Robust thermal performance supporting high junction temperatures

Applications

  • General-purpose switching circuits
  • Power management applications requiring low saturation voltage
  • Amplifier stages in consumer electronics

Procurement Notes

Verify the obsolete status before procurement, as this component is marked Not Recommended for New Designs. Confirm availability through authorized distributors or secondary markets. Ensure that the MPT3 package dimensions match the target PCB footprint. Check RoHS compliance documentation for specific regulatory requirements. Validate the supplier's authenticity to avoid counterfeit components.

Selection Notes

Select this component for designs requiring a balance between current handling and speed in a compact SMD package. Consider the 30V voltage rating against circuit supply levels. Evaluate the 2W power dissipation limit under expected thermal conditions. Compare the 330MHz bandwidth with signal frequency requirements. Review the hFE range for gain consistency needs.

Part Context

This part belongs to ROHM's lineup of general-purpose NPN transistors designed for surface-mount assembly. The MPT3 package provides a compact form factor suitable for space-constrained boards. It serves as a discrete solution for switching and amplification tasks where standard BJT characteristics are sufficient.

Replacement Considerations

The 2SCR512P5T100 is listed as a similar replacement option. Verify pinout compatibility and electrical parameter alignment before substitution.

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