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The 2SD2662T100 is a single NPN bipolar junction transistor manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an MPT3 (TO-243AA) surface-mount package. The device supports a maximum collector current of 1.5 A and a collector-emitter voltage of 30 V. Key electrical parameters include a transition frequency of 330 MHz, a power dissipation rating of 2 W, and a DC current gain ranging from 270 to higher values at specified test conditions. The component operates within a temperature range up to +150°C.
Verify the obsolete status before procurement, as this component is marked Not Recommended for New Designs. Confirm availability through authorized distributors or secondary markets. Ensure that the MPT3 package dimensions match the target PCB footprint. Check RoHS compliance documentation for specific regulatory requirements. Validate the supplier's authenticity to avoid counterfeit components.
Select this component for designs requiring a balance between current handling and speed in a compact SMD package. Consider the 30V voltage rating against circuit supply levels. Evaluate the 2W power dissipation limit under expected thermal conditions. Compare the 330MHz bandwidth with signal frequency requirements. Review the hFE range for gain consistency needs.
This part belongs to ROHM's lineup of general-purpose NPN transistors designed for surface-mount assembly. The MPT3 package provides a compact form factor suitable for space-constrained boards. It serves as a discrete solution for switching and amplification tasks where standard BJT characteristics are sufficient.
The 2SCR512P5T100 is listed as a similar replacement option. Verify pinout compatibility and electrical parameter alignment before substitution.