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The 2SD2703TL is a single NPN bipolar junction transistor manufactured by ROHM Semiconductor. It features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 1 A. The device operates with a power dissipation capacity of 800 mW and exhibits a transition frequency of 320 MHz. Key electrical parameters include a collector-base voltage of 30 V, an emitter-base voltage of 6 V, and a collector-emitter saturation voltage of 250 mV at specified test conditions. It utilizes the TUMT3 surface-mount package.
Verify component authenticity through authorized distribution channels. Confirm that the received parts match the specific marking codes associated with the TUMT3 package variant. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering. Cross-reference datasheet revisions to confirm parameter consistency for production integration.
Select this component when a 30 V NPN transistor with 1 A current handling is required in a compact surface-mount form factor. Consider the 320 MHz transition frequency for medium-speed switching needs. Evaluate the 800 mW power dissipation limit against thermal management constraints within the target application environment.
This part belongs to the 2SD2702 series family from ROHM Semiconductor. It shares similar packaging and structural characteristics with related models like the 2SD2702TL, differing primarily in voltage ratings and current capabilities. The series targets cost-effective, high-volume consumer and industrial electronics requiring reliable NPN switching performance.
Direct substitutes include other 30 V NPN transistors in the SOT-346 or equivalent flat lead packages with matching current and power ratings. Verify pinout compatibility and thermal resistance values before substitution.