2SD600KE

2SD600KE

$0.23
  • Description:TRANS NPN 120V 1A TO-126
  • Series:-

SKU:8563abc57c1e Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 120V 1A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 50mA, 5V
  • Power - Max:1 W
  • Frequency - Transition:130MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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2SD600KE

Overview

The 2SD600KE is a single NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed for general-purpose switching and amplification applications. The device features a collector-emitter voltage rating of 120 V and a continuous collector current capacity of 1 A. It operates with a transition frequency of 130 MHz and supports a maximum power dissipation of 1 W. The component is housed in a TO-126 through-hole package, suitable for standard printed circuit board assembly.

Feature Summary

  • NPN configuration for unidirectional current control
  • High voltage blocking capability up to 120 V
  • Moderate speed operation at 130 MHz
  • Through-hole mounting for robust mechanical connection

Applications

  • General-purpose signal amplification
  • Low-power switching circuits
  • Driver stages for relay or LED loads
  • Audio pre-amplifier stages

Procurement Notes

Verify the specific manufacturer source when ordering, as onsemi acquired Fairchild Semiconductor. Ensure the part number matches the exact electrical specifications required for your design. Confirm that the TO-126 package dimensions align with your PCB footprint constraints. Request official datasheets from authorized distributors to validate performance characteristics against your application requirements.

Selection Notes

Select this component for applications requiring moderate voltage handling and current drive capabilities. The TO-126 package offers better thermal dissipation than smaller surface-mount alternatives. Consider the 130 MHz transition frequency for high-speed digital switching needs. Evaluate the 1 W power rating to ensure adequate heat management within the enclosure design without additional heatsinking.

Part Context

This transistor belongs to the family of discrete bipolar junction transistors used in electronic circuits. It serves as a fundamental active component for controlling larger currents with smaller signals. The TO-126 package is a legacy through-hole style often found in industrial and consumer electronics. It provides a balance between performance and ease of manual assembly.

Replacement Considerations

Direct substitutes may include other NPN transistors with similar voltage and current ratings such as the 2SC1815 or 2N3904, provided the package type is compatible. Verify pinout compatibility before substitution. Check if the replacement device meets the required transition frequency and power dissipation limits for the specific circuit application.

2SD600KE2SD600KE
$0.23
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