2SD667A-B-AP

2SD667A-B-AP

  • Description:TRANS NPN 100V 1A TO-92MOD
  • Series:-

SKU:4de4286d84ce Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS NPN 100V 1A TO-92MOD
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 150mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:140MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Download product information

2SD667A-B-AP

Overview

The 2SD667A-B-AP is an NPN silicon plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a collector-emitter breakdown voltage of 100Vdc and a collector-base breakdown voltage of 120Vdc. The device supports a maximum collector current of 1.0A and power dissipation up to 900mW. Key electrical characteristics include a DC current gain (hFE) range of 60 to 320, a transition frequency of 140MHz, and a collector cutoff current of 10µAdc. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • High-speed switching capability with satisfactory linearity of forward current transfer ratio
  • Low collector saturation voltage for efficient operation
  • Epoxy material meets UL 94 V-0 flammability rating
  • RoHS compliant construction with lead-free finish

Applications

  • General-purpose power switching applications
  • Amplifier circuits requiring high breakdown voltage
  • Electronic equipment utilizing through-hole mounting

Procurement Notes

Verify the specific suffix against official documentation to confirm compliance status and packaging type. Confirm availability as distribution channels may vary. Ensure compatibility with existing circuit designs regarding thermal management and voltage ratings before integration.

Selection Notes

Select this component for applications requiring robust NPN switching with high voltage tolerance. Consider the TO-92MOD package for standard through-hole implementations. Evaluate thermal requirements to ensure power dissipation limits are not exceeded during continuous operation.

Part Context

This part belongs to the 2SD667 series of NPN silicon transistors produced by Micro Commercial Components. The series is designed for general-purpose use in electronic circuits. The specific model denotes particular electrical grading and packaging configuration within the broader product family.

Replacement Considerations

Consult official datasheets for equivalent parts from other manufacturers. Verify pinout compatibility and electrical parameter alignment before substitution.

FAQ

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage is 120Vdc.

Does the component meet RoHS standards?

Yes, the P suffix designates that the component is RoHS compliant.

What is the operating junction temperature range?

The operating and storage junction temperature range is -55°C to +150°C.

2SD667A-B-AP2SD667A-B-AP

Click on the inquiry