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The 2SD667A-B-AP is an NPN silicon plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a collector-emitter breakdown voltage of 100Vdc and a collector-base breakdown voltage of 120Vdc. The device supports a maximum collector current of 1.0A and power dissipation up to 900mW. Key electrical characteristics include a DC current gain (hFE) range of 60 to 320, a transition frequency of 140MHz, and a collector cutoff current of 10µAdc. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix against official documentation to confirm compliance status and packaging type. Confirm availability as distribution channels may vary. Ensure compatibility with existing circuit designs regarding thermal management and voltage ratings before integration.
Select this component for applications requiring robust NPN switching with high voltage tolerance. Consider the TO-92MOD package for standard through-hole implementations. Evaluate thermal requirements to ensure power dissipation limits are not exceeded during continuous operation.
This part belongs to the 2SD667 series of NPN silicon transistors produced by Micro Commercial Components. The series is designed for general-purpose use in electronic circuits. The specific model denotes particular electrical grading and packaging configuration within the broader product family.
Consult official datasheets for equivalent parts from other manufacturers. Verify pinout compatibility and electrical parameter alignment before substitution.
The maximum collector-base breakdown voltage is 120Vdc.
Yes, the P suffix designates that the component is RoHS compliant.
The operating and storage junction temperature range is -55°C to +150°C.