2SD667A-C-AP

Overview

The 2SD667A-C-AP is an NPN silicon plastic-encapsulated transistor manufactured by Micro Commercial Components. It features a collector-emitter breakdown voltage of 100Vdc and a collector-base breakdown voltage of 120Vdc. The device supports a maximum collector current of 1.0A and dissipates up to 900mW. It operates within a junction temperature range of -55°C to +150°C. The transition frequency is typically 140MHz, with a DC current gain ranging from 100 to 200 for the 'C' rank.

Feature Summary

• Utilizes planar technology for rugged high-performance operation
• Features low saturation voltage characteristics
• Includes epoxy meeting UL 94 V-0 flammability rating
• Designed for general-purpose switching applications

Applications

• General-purpose switching circuits
• Low-voltage amplifier stages
• Power supply regulation modules

Procurement Notes

Verify the specific ordering suffix against official MCC documentation to confirm package type and compliance status. Ensure the component matches the required hFE binning for your circuit design. Confirm availability through authorized distributors to avoid counterfeit parts. Check for any recent product change notices regarding manufacturing updates or discontinuation.

Selection Notes

Select this component when a robust NPN transistor with moderate voltage ratings and high current capability is required. Consider the TO-92MOD package constraints for thermal management in enclosed designs. Evaluate the hFE spread requirements against the available ranking options. Ensure the operating environment stays within the specified temperature limits.

Part Context

This part belongs to the 2SD667 series of NPN silicon transistors produced by Micro Commercial Components. The series includes variants with different voltage ratings and packaging options. The 2SD667A specifically denotes the 100V collector-emitter breakdown variant. These components are widely used in consumer electronics and industrial control systems.

Replacement Considerations

Direct substitutes include other NPN transistors with similar voltage and current ratings, such as the 2SD667B or 2SD667D, depending on the required hFE gain bin. Verify pinout compatibility and thermal dissipation capabilities before substitution.