2SD669A-B-BP

Overview

The MCC 2SD669A-B-BP is an NPN silicon small-signal transistor housed in a TO-92 package. It features a maximum collector-emitter voltage of 120 V and a collector-base voltage of 180 V. The device supports a continuous collector current of 1.5 A with a power dissipation capability of 1 W. Electrical characteristics include a transition frequency of 140 MHz (typical) and a collector output capacitance of 14 pF (typical). The 'B' suffix indicates a DC current gain rank of 60 to 120, while the '-BP' suffix denotes bulk packaging containing 1,000 pieces per box.

Feature Summary

• NPN silicon construction designed for general-purpose switching and amplification applications
• Capable of handling up to 1.5 A collector current with 1 W power dissipation
• High breakdown voltage ratings including 180 V collector-base and 120 V collector-emitter
• RoHS compliant lead-free finish with epoxy meeting UL 94 V-0 flammability rating

Applications

• Low frequency power amplifier circuits
• General purpose switching applications
• Complementary pair usage with UTC 2SB649/A transistors

Procurement Notes

Verify that the ordering suffix matches the required specifications. The 'B' suffix confirms the specific hFE bin range of 60 to 120. Confirm the '-BP' designation corresponds to the bulk packaging format of 1,000 units per box. Ensure compliance requirements such as RoHS or halogen-free status are met by checking for additional suffixes like '-HF'.

Selection Notes

Select this component when a high-voltage NPN transistor is required for low-frequency operations. The 120 V collector-emitter rating suits applications exceeding standard 50 V limits. Verify that the minimum hFE of 60 meets the circuit's drive requirements. Consider the TO-92 through-hole package for prototyping or applications where surface-mount options are unsuitable.

Part Context

This part belongs to the 2SD669 series manufactured by Micro Commercial Components. The series includes variants with different voltage ratings and gain bins. The 2SD669A specifically denotes the 120 V collector-emitter breakdown variant, distinct from other series members. It serves as a general-purpose bipolar junction transistor suitable for various discrete semiconductor applications.

Replacement Considerations

Compatible substitutes within the same family include the 2SD669 and 2SD669A models. Other gain-ranked versions such as 2SD669-C or 2SD669-D may be used if higher current gain is acceptable. Cross-manufacturer replacements must match the 1.5 A current, 120 V voltage, and TO-92 package constraints.