2SD863E-AE

2SD863E-AE

$0.12
  • Description:TRANS NPN 50V 1A 3-MP
  • Series:-

SKU:25105b6569c0 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 50V 1A 3-MP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:3-MP
  • Grade:-
  • Qualification:-

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2SD863E-AE

Overview

The onsemi 2SD863E-AE is a single NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) rating of 1 A. The device is housed in a TO-92VAR through-hole package, suitable for board-level mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 60 and an absolute maximum power dissipation of 0.9 W. The component supports a maximum operating temperature of 150 °C, ensuring reliability under elevated thermal conditions.

Feature Summary

  • Single NPN configuration optimized for standard switching and linear amplification tasks
  • Robust thermal performance with a maximum junction temperature rating of 150 °C
  • Through-hole TO-92VAR package facilitates manual assembly and prototyping

Applications

  • General-purpose signal amplification circuits
  • Low-power electronic switching applications
  • Driver stages for relay or LED control

Procurement Notes

Verify the specific suffix 'AE' against official manufacturer documentation to confirm exact binning or testing criteria, as generic part numbers may encompass multiple variants. Ensure the procurement channel provides traceable origin data. Confirm RoHS compliance status directly from the latest datasheet revision, as regulatory adherence can vary by manufacturing lot and region. Cross-reference the package marking with the official mechanical drawing to prevent counterfeit substitution.

Selection Notes

Select this component when a 50 V NPN BJT with 1 A current capability is required in a compact through-hole form factor. The TO-92VAR package offers a balance between thermal dissipation and space efficiency for low-to-medium power designs. Consider the minimum hFE of 60 for base drive calculations to ensure saturation in switching modes. Evaluate the 0.9 W power dissipation limit against the expected thermal environment to determine if additional heatsinking is necessary for sustained operation.

Part Context

The 2SD863 series belongs to onsemi's portfolio of discrete bipolar transistors intended for consumer and industrial electronics. These devices are engineered to provide reliable performance in cost-sensitive applications requiring moderate voltage and current handling. The TO-92VAR variant represents a specific mechanical footprint within the broader TO-92 family, often selected for its compatibility with standard PCB footprints used in legacy and modern consumer hardware designs.

Replacement Considerations

Publicly confirmed substitute part numbers for the 2SD863E-AE were not identified in available verified sources. Engineers should consult official cross-reference guides or contact onsemi technical support for validated alternatives that match the 50 V, 1 A, TO-92VAR specifications.

2SD863E-AE2SD863E-AE
$0.12
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