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The Panasonic 2SJ03640QL is a silicon P-channel junction FET designed for analog switch circuits. It operates with a gate-drain voltage rating of 65 V and a drain current limit of -20 mA. The device features an ON resistance of 300 Ω at zero gate-source bias. Electrical characteristics include a forward transfer admittance ranging from 1.8 to 2.5 mS at 1 kHz. Capacitance values are specified as 12 pF for input, 4 pF for reverse transfer, and output capacitance data provided in characteristic curves. The component utilizes the SMini3-G1 package and complies with RoHS directives.
Verify the specific ordering suffix against official documentation to confirm exact binning or packaging variations. Confirm current lifecycle status directly with the manufacturer, as this component may be subject to maintenance or discontinuation phases. Ensure compliance with export control regulations if applicable to your region. Request the latest product standards before finalizing procurement to account for potential specification updates.
Select this component based on its P-channel configuration and low noise profile for analog signal routing. Evaluate the 300 Ω ON resistance against circuit impedance requirements. Consider the -20 mA drain current limit when designing load paths. Verify that the SMini3-G1 package dimensions fit the target PCB layout constraints.
This part belongs to the Panasonic Silicon Junction FETs (Small Signal) series. It serves as a specialized discrete semiconductor for low-power analog switching tasks. The device represents a standard offering within the manufacturer's general-purpose transistor portfolio, distinct from high-power or RF-specific variants.
Consult the official Panasonic replacement guide for verified substitutes. Cross-reference pinouts and electrical ratings carefully when evaluating alternative P-channel JFETs.