2SJ058200L

2SJ058200L

  • Description:MOSFET P-CH 200V 2A U-G2
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)

SKU:80ef4229c22b Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CH 200V 2A U-G2
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta), 10W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:U-G2
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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2SJ058200L

Overview

The Panasonic 2SJ058200L is a silicon P-channel power MOSFET housed in the U-G2 package. It features a drain-source voltage rating of -200 V and a continuous drain current capacity of ±2 A at 25°C, with a peak pulse current of ±4 A. The device guarantees an avalanche energy capability of 10 mJ and exhibits high-speed switching characteristics. Key electrical parameters include a maximum gate-source voltage of ±20 V, a typical on-resistance of 2.0 Ω at VGS = -10 V, and a forward transfer admittance up to 1.7 S. Thermal resistance from channel to case is specified at 12.5 °C/W.

Feature Summary

  • Guaranteed avalanche energy capability for robust operation under transient conditions
  • High-speed switching performance suitable for efficient power conversion applications
  • Elimination of secondary breakdown effects to enhance operational reliability

Applications

  • Non-contact relay circuits
  • Solenoid drive systems
  • Motor drive control units
  • Switching mode regulators

Procurement Notes

Verify the current lifecycle status via official channels before procurement, as this component is categorized under maintenance or discontinued stages. Confirm that the specific ordering suffix matches the required packaging configuration. Ensure compliance with RoHS directives applicable to your region. Request the latest product standards directly from the manufacturer to validate specifications prior to final design integration.

Selection Notes

Select this component for designs requiring high-voltage P-channel isolation with moderate current handling capabilities. Evaluate thermal management requirements based on the 12.5 °C/W junction-to-case resistance. Verify that the gate threshold voltage range aligns with the driving logic levels. Consider the guaranteed avalanche energy when designing for inductive load switching scenarios to ensure system durability.

Part Context

This part belongs to the Panasonic silicon P-channel power MOSFET family, designed for general electronic equipment and industrial control applications. It utilizes a specialized U-G2 surface-mount package optimized for thermal dissipation and space-constrained layouts. The device is engineered to meet standard industry reliability benchmarks for commercial and industrial use cases.

Replacement Considerations

Consult official replacement lists for verified substitute part numbers. Cross-reference pinouts and thermal characteristics carefully when evaluating alternatives. Ensure any substitute component meets the same voltage and current ratings to maintain circuit integrity.

2SJ058200L2SJ058200L

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