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The 2SJ166-T1B-A is a P-channel MOSFET designed for automotive applications. It features a single channel with a drain current (ID) of -0.1 A and a typical input capacitance (Ciss) of 18 pF. The device has a maximum on-resistance (RDS(on)) of 50,000 mΩ at 4.5 V gate drive. It is housed in a compact 3 x 3 x 1.4 mm package with three leads. The component is lead-free and compliant with relevant standards, utilizing an embossed tape carrier type for automated assembly.
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with current automotive qualification standards. Confirm that the embossed tape packaging matches your pick-and-place equipment specifications. Check for any end-of-life notices or obsolescence warnings from Renesas Electronics before finalizing procurement plans.
Select this component when a small-signal P-channel MOSFET is required for low-current automotive switching tasks. The high RDS(on) value indicates suitability for low-power applications rather than high-current power distribution. Ensure the operating voltage does not exceed the device's rated limits and that the thermal management strategy accounts for the small package size.
This part belongs to Renesas' portfolio of power MOSFETs tailored for automotive use. These components are engineered to meet the rigorous reliability and temperature requirements of automotive environments. The series offers various packages to accommodate different current handling needs, ranging from large-current to medium-current applications.
Check for direct cross-reference part numbers from Renesas or other manufacturers that match the pinout, voltage ratings, and package dimensions. Verify that any substitute component meets the same automotive qualification levels and electrical characteristics, particularly the on-resistance and current handling capabilities.