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Product Detailed Parameters
- Description：P-CHANNEL, MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SJ166(1)-T1B-A is a P-channel MOSFET manufactured by Renesas Electronics Corporation. It features a single channel configuration with a typical input capacitance (Ciss) of 18 pF and a drain current (ID) rating of -0.1 A. The device utilizes a leaded package with three leads and is compliant with Pb-free standards. The component is supplied in an embossed tape carrier format, suitable for automated surface-mount assembly processes.
Feature Summary
- P-channel MOSFET architecture
- Lead-free construction
- Embossed tape packaging
Applications
- Automotive power switching applications
Procurement Notes
Verify the manufacturer part number against official Renesas documentation to ensure authenticity. Confirm that the received components match the specified P-channel MOSFET type and package style. Check for compliance markings indicating lead-free status. Ensure the embossed tape carrier condition is intact upon receipt to prevent handling damage during SMT placement.
Selection Notes
Select this component for designs requiring a small-signal P-channel MOSFET with low input capacitance. The -0.1 A current rating limits suitability to low-power switching tasks. Verify voltage ratings against specific circuit requirements as they are not detailed in the provided summary data. Ensure the three-lead package fits the target PCB footprint constraints.
Part Context
This part belongs to the Renesas 2SJ166 series of single FETs. It is categorized under Power MOSFETs intended for automotive use. The manufacturer identifies it specifically as a P-channel device within their discrete semiconductor portfolio.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Do not assume cross-compatibility with other P-channel MOSFETs without verifying pinout and electrical parameter alignment.
