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Product Detailed Parameters
- Description：PCH POWER MOSFET -60V -3A 400MOH
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：20W (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The 2SJ182STR-E is a P-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source breakdown voltage of -60V and a continuous drain current rating of -3A. The device exhibits a maximum on-resistance of 400mΩ. It is housed in a DPAK(S) or TO-252 surface-mount package with three leads. The component operates in enhancement mode and includes a built-in diode. It is compliant with RoHS standards and supports operating temperatures up to 150°C.
Feature Summary
- P-channel single power MOSFET configuration
- Built-in body diode for circuit protection
- Surface-mount DPAK(S)/TO-252 packaging
Applications
- Industrial equipment power management
- Consumer electronics power switching
- General-purpose low-voltage DC-DC conversion
Procurement Notes
Verify the specific datasheet version corresponding to the 2SJ182STR-E suffix to confirm electrical characteristics, as variations may exist within the product family. Ensure the procurement channel provides traceability documentation confirming the component originates from Renesas Electronics Corporation. Check for compliance with current environmental regulations such as RoHS directives before finalizing orders.
Selection Notes
Select this component when designing circuits requiring a -60V rated P-channel switch with moderate current handling capabilities around 3A. The 400mΩ on-resistance makes it suitable for applications where conduction losses must be balanced against cost and package size constraints. Consider the thermal performance of the DPAK(S) package relative to the expected duty cycle and ambient temperature conditions.
Part Context
This part belongs to the Renesas 2SJ series of P-channel power MOSFETs. These devices are designed for general-purpose switching applications in both industrial and consumer sectors. The series offers various voltage and current ratings to accommodate different power requirements while maintaining standard surface-mount compatibility for automated assembly processes.
Replacement Considerations
Direct substitutes include other -60V P-channel MOSFETs in TO-252 packages with comparable current and resistance ratings. Verify pinout compatibility and thermal characteristics before substitution. Cross-reference with manufacturer replacement guides for confirmed equivalent parts.
