2SJ207-AZ

2SJ207-AZ

$0.44
  • Description:P-CHANNEL SMALL SIGNAL MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk

SKU:2d5f47792e01 Category: Brand:

  
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Product Detailed Parameters

  • Description:P-CHANNEL SMALL SIGNAL MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SJ207-AZ

Overview

The Renesas 2SJ207-AZ is a P-channel small signal MOSFET designed for switching applications. It utilizes the POMM package, measuring 2 x 4 x 1.6 mm with three leads. The component features a maximum on-resistance of 4000 mΩ at 2.5V or 1.8V gate drive. It is qualified for industrial and consumer use environments.

Feature Summary

  • P-channel small signal MOSFET configuration
  • Compact POMM surface-mount packaging
  • Qualified for industrial and consumer applications

Applications

  • Industrial switching circuits
  • Consumer electronic power management

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the official Renesas Electronics Corporation documentation before integration. Confirm that the POMM package dimensions and lead count match your PCB footprint requirements. Ensure the supplier provides genuine components with traceable origin to maintain quality standards for industrial and consumer applications.

Selection Notes

Select this component for low-current P-channel switching tasks where space constraints necessitate the compact POMM form factor. Evaluate the 4000 mΩ on-resistance limit to ensure it meets the voltage drop and thermal dissipation requirements of the target circuit under the specified 2.5V or 1.8V drive conditions.

Part Context

This device belongs to Renesas' portfolio of discrete power semiconductors intended for general-purpose switching. It serves as a fundamental building block in power control stages for various electronic systems requiring reliable P-channel operation within defined industrial and consumer qualification levels.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any alternative maintains the P-channel type, POMM package compatibility, and equivalent electrical performance metrics.

2SJ207-AZ2SJ207-AZ
$0.44
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