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The 2SJ214STL-E is a Silicon P-Channel MOS FET manufactured by Renesas Electronics Corporation. It utilizes the TO-220AB flange mount package with three terminals, where the source connects to the flange. The device operates in enhancement mode and features a single configuration with a built-in diode. Key electrical specifications include a maximum drain current of 0.5 A and a maximum drain-source voltage of 60 V.
Verify component authenticity through official Renesas channels or authorized distributors. Confirm RoHS compliance status as documentation indicates non-compliance. Ensure the TO-220AB package matches system thermal requirements. Validate that the leaded construction meets specific environmental regulations for the target deployment region.
Select this component when a P-channel MOSFET with 0.5 A continuous current capability is required. The TO-220AB package facilitates effective heat dissipation via the flange-mounted source terminal. Consider the complementary nature of the device if paired with an N-channel counterpart like the 2SK214 for push-pull configurations.
This part belongs to the 2SK213/214/215/216 series family documented under REJ03G0903-0200. It serves as the P-channel complement to the 2SK214 N-channel device. The series is characterized by high forward transfer admittance and is designed for direct mounting applications.
Public confirmed substitute part numbers are not available in the provided documentation.