2SJ215-E

$3.93

Description：P-CHANNEL MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:9638d06b93be Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：P-CHANNEL MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SJ215-E

Overview

The Renesas 2SJ215-E is a P-channel MOSFET transistor designed for power switching applications. It features a drain-to-source voltage rating of -60 V and a gate-to-source voltage limit of ±20 V. The device supports a continuous drain current of -35 A, with specific peak current capabilities defined in its electrical characteristics. Packaged in a TO-3P case, this component serves as a robust discrete semiconductor solution for managing high-current loads in electronic circuits.

Feature Summary

Utilizes P-channel MOSFET technology for efficient power switching operations
Engineered with a TO-3P package to facilitate thermal management in high-power scenarios

Applications

General-purpose switching circuits requiring P-channel control
Power management systems utilizing discrete MOSFET stages
Industrial equipment power interfaces

Procurement Notes

Verify the exact suffix designation against official Renesas documentation to confirm pinout and thermal specifications. Ensure the procurement channel provides authentic components from authorized distributors. Cross-reference the datasheet revision date to guarantee compatibility with current design standards and regulatory requirements.

Selection Notes

Select this component when a P-channel configuration is required for high-current switching tasks. The TO-3P package offers distinct advantages for applications needing direct mounting to heat sinks. Evaluate the -35 A continuous current rating against the specific load demands of the target circuit to ensure adequate performance margins.

Part Context

This part belongs to the Renesas discrete power transistor portfolio, which includes various MOSFET options for diverse industrial and consumer electronics needs. The 2SJ series typically addresses standard power switching requirements, providing reliable performance within established voltage and current limits for general electronic designs.