2SJ350

$1.29

Description：P-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:9ea911cdf77d Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：P-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SJ350

Overview

The 2SJ350 is a P-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-speed power switching applications, offering low on-resistance and low drive current requirements. The device supports 4 V gate drive operation, allowing compatibility with standard logic levels. Key electrical parameters include a drain-source resistance of 900mΩ, a minimum breakdown voltage of 120V, and a maximum power dissipation of 20W. It features three terminals and operates at a maximum temperature of 150°C.

Feature Summary

Low on-resistance for efficient power handling
High-speed switching capability
Low drive current requirement
Compatible with 4 V gate drive devices

Applications

Power management systems
Motor driving circuits
Industrial control applications

Procurement Notes

Verify the manufacturer documentation to confirm the specific package code and lead time constraints. Ensure the component meets RoHS compliance standards as indicated in official specifications. Cross-reference the part number with authorized distributors to avoid counterfeit products. Confirm thermal management requirements based on the 20W power dissipation rating during system integration.

Selection Notes

Select this component for designs requiring P-channel MOSFETs with 120V breakdown voltage and 900mΩ on-resistance. Consider the 20W power dissipation limit when designing heat sinks or PCB copper areas. Verify that the 4 V gate drive compatibility matches the control logic voltage levels in the target application circuit.

Part Context

This component belongs to the Renesas Electronics discrete semiconductor portfolio, specifically within the power MOSFET category. Renesas, formed from the merger of NEC Electronics and Renesas Technology, provides this device for general-purpose power switching needs. The product line targets industrial and consumer electronics markets requiring reliable high-speed switching performance.