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Product Detailed Parameters
- Description：2SJ358-T1-AZ - P-CHANNEL MOS FET
- Series：-
- Mfr：Renesas
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：300mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：23.9 nC @ 10 V
- Vgs (Max)：+10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：MP-2
- Package / Case：TO-243AA
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Overview
The Renesas 2SJ358-T1-AZ is a P-channel MOSFET designed for switching applications. It operates with a drain-to-source voltage of 60 V and supports a continuous drain current of 3 A at 25°C ambient temperature. The device features a maximum on-resistance of 300 mΩ at 10 V drive voltage and has a typical gate charge of 23.9 nC. It is housed in a TO-243AA surface-mount package, dissipating up to 2 W of power. The component is qualified for industrial use and withstands operating temperatures up to 150°C.
Feature Summary
- P-channel MOSFET technology optimized for switching operations
- Surface-mount construction in a compact TO-243AA package
- Industrial qualification level for robust performance
Applications
- General-purpose electronic circuit switching
- Power management modules requiring P-channel control
- Industrial equipment signal processing
Procurement Notes
Verify the exact part number suffix against official Renesas documentation to confirm package type and qualification level. Ensure compatibility with your specific thermal and electrical requirements before procurement. Cross-reference datasheets from authorized distributors to validate specifications. Confirm that the component meets all necessary industrial standards for your intended application environment.
Selection Notes
Select this component when a P-channel MOSFET with 60 V rating and 3 A current capacity is required. Consider the TO-243AA package for surface-mount integration. Evaluate the 300 mΩ on-resistance for efficiency needs. Verify that the 150°C operating temperature range suits your system's thermal conditions. Compare against similar Renesas series parts if alternative packaging or parameters are needed.
Part Context
This component belongs to Renesas' single FET and MOSFET product line. It is categorized under discrete semiconductors used for switching functions. The 2SJ358 series includes variants like the 2SJ358C-T1-AZ, which share similar core specifications but may differ in specific testing or packaging details. These devices are commonly utilized in automotive and industrial electronics for power control tasks.
Replacement Considerations
The 2SJ358C-T1-AZ is a related variant within the same series. Verify pinout and electrical parameter equivalence before substitution. Consult official Renesas documentation to confirm functional compatibility and ensure no changes in qualification level or package dimensions affect the design.
