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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR, 2
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SJ361RYTR-E is a P-channel power field-effect transistor manufactured by Renesas Electronics. It is designed for high-efficiency switching applications in power management circuits. The device features low on-resistance and fast switching characteristics, making it suitable for DC-DC converters and motor drive systems. It operates within standard voltage ranges typical for power MOSFETs.
