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The 2SJ387L-E is a silicon P-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-efficiency switching applications requiring robust performance in automotive and industrial environments. The device features a single FET configuration optimized for low on-resistance and fast switching speeds. It operates within specified voltage and current limits suitable for power management circuits. The component is available in standard surface-mount packages to facilitate automated assembly processes.
Verify the specific suffix and package variant against the official Renesas datasheet before ordering. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure storage conditions meet moisture sensitivity level requirements to prevent damage during assembly.
Select this component for applications requiring reliable P-channel switching in harsh environments. Evaluate thermal dissipation capabilities and gate drive compatibility with the target controller. Compare absolute maximum ratings against system operating conditions to ensure adequate safety margins.
This part belongs to Renesas' portfolio of discrete power semiconductors. It complements other MOSFETs in the series, offering consistent performance characteristics across similar form factors. The product line supports various automotive and industrial power conversion needs.
Consult the official cross-reference guide for verified substitutes. Ensure pinout compatibility and electrical specifications match exactly when considering alternative manufacturers.