2SJ387L-E

2SJ387L-E

$1.56
  • Description:P-CHANNEL POWER MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk

SKU:3a7a1af5f5a8 Category: Brand:

  
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Product Detailed Parameters

  • Description:P-CHANNEL POWER MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SJ387L-E

Overview

The 2SJ387L-E is a silicon P-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-efficiency switching applications requiring robust performance in automotive and industrial environments. The device features a single FET configuration optimized for low on-resistance and fast switching speeds. It operates within specified voltage and current limits suitable for power management circuits. The component is available in standard surface-mount packages to facilitate automated assembly processes.

Feature Summary

  • Silicon P-channel construction for efficient power switching
  • Optimized for low on-resistance and thermal stability
  • Designed for automotive-grade reliability standards

Applications

  • Automotive power management systems
  • Industrial motor control circuits
  • DC-DC converter output stages

Procurement Notes

Verify the specific suffix and package variant against the official Renesas datasheet before ordering. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure storage conditions meet moisture sensitivity level requirements to prevent damage during assembly.

Selection Notes

Select this component for applications requiring reliable P-channel switching in harsh environments. Evaluate thermal dissipation capabilities and gate drive compatibility with the target controller. Compare absolute maximum ratings against system operating conditions to ensure adequate safety margins.

Part Context

This part belongs to Renesas' portfolio of discrete power semiconductors. It complements other MOSFETs in the series, offering consistent performance characteristics across similar form factors. The product line supports various automotive and industrial power conversion needs.

Replacement Considerations

Consult the official cross-reference guide for verified substitutes. Ensure pinout compatibility and electrical specifications match exactly when considering alternative manufacturers.

2SJ387L-E2SJ387L-E
$1.56
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