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The 2SJ387STL-E is a P-channel MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source breakdown voltage of 60 V, making it suitable for automotive systems operating within standard 12 V or 24 V environments. The component is designed for discrete semiconductor applications and is classified as an active product unaffected by REACH regulations.
Verify the specific suffix 'STL' against official Renesas documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with target thermal and electrical requirements before integration. Cross-reference part numbers with authorized distributors to avoid counterfeit components.
Select this component when a 60 V P-channel MOSFET is required for low-voltage automotive or industrial applications. Confirm that the package style matches the PCB layout constraints. Verify current handling capabilities against the specific circuit load demands.
This part belongs to the single FETs category from Renesas Electronics Corporation. It is distinct from the ISL88732 battery charger IC also listed in distributor catalogs. The 2SJ387 series includes variants such as 2SJ387L and 2SJ387S.
Check for direct substitutes within the 2SJ387 series, such as 2SJ387L or 2SJ387S, ensuring pinout and electrical parameters match exactly.