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Product Detailed Parameters
- Description：MOSFET P-CH TO220NIS
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220NIS
- Package / Case：TO-220-3 Full Pack
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Overview
The Toshiba Semiconductor and Storage 2SJ438(CANO,Q,M) is a silicon P-channel MOS field-effect transistor utilizing L²-π-MOSV technology. It features a maximum drain-source voltage of -60 V and a continuous DC drain current rating of -5 A. The device exhibits a typical forward transfer admittance of 4.0 S and a low channel-to-case thermal resistance of 5.0 °C/W. Designed for surface-mount applications, it supports a junction temperature up to 150°C.
Feature Summary
- Supports 4-V gate drive operation
- Features low drain-source ON resistance
- Provides high forward transfer admittance
- Includes low leakage current characteristics
Applications
- DC-DC converter circuits
- Relay drive systems
- Motor drive applications
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility or manufacturing lot indications. Confirm package type JEDEC SC-67 availability and ensure design parameters align with absolute maximum ratings to maintain reliability under heavy loads.
Selection Notes
Select this component for designs requiring efficient switching in compact power stages. Evaluate thermal management requirements based on the specified channel-to-case thermal resistance. Ensure gate drive voltages remain within the threshold range of -0.8 to -2.0 V for proper enhancement mode operation.
Part Context
This part belongs to the 2SJ438 series of P-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. It utilizes L²-π-MOSV technology to achieve performance metrics suitable for general electronics applications, including computers and industrial equipment, while adhering to standard surface-mount packaging formats.
Replacement Considerations
Consult official Toshiba substitution guides for verified alternatives. Do not assume functional equivalence with generic P-channel MOSFETs without verifying pinout compatibility, voltage ratings, and thermal characteristics.
