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Product Detailed Parameters
- Description：MOSFET P-CH TO220NIS
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220NIS
- Package / Case：TO-220-3 Full Pack
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Overview
The Toshiba 2SJ438 is a silicon P-channel MOSFET utilizing L²-π-MOSV technology, designed for DC-DC converters, relay drives, and motor drives. It features a drain-source voltage of -60 V and a continuous drain current of -5 A at 25°C case temperature. The device exhibits a typical drain-source on-resistance of 0.16 Ω at VGS = -4 V and a forward transfer admittance of 4.0 S. Key electrical parameters include a gate threshold voltage range of -0.8 to -2.0 V, a maximum gate leakage current of ±10 μA, and a total gate charge of 22 nC. Thermal characteristics specify a channel-to-case thermal resistance of 5.0 °C/W.
Feature Summary
- Utilizes L²-π-MOSV technology for enhanced performance in power switching applications
- Supports direct 4-V gate drive capability for simplified control circuitry
- Features low drain-source on-resistance to minimize conduction losses
- Provides high forward transfer admittance for efficient signal amplification
Applications
- DC-DC converter circuits
- Relay drive systems
- Motor drive modules
Procurement Notes
Verify the specific ordering suffix (MDKQ) against official Toshiba Semiconductor and Storage documentation to confirm environmental compliance status, such as RoHS compatibility, and lot marking variations. Confirm that the component meets the intended application's reliability requirements by consulting the Toshiba Semiconductor Reliability Handbook. Ensure proper handling precautions are observed due to electrostatic sensitivity.
Selection Notes
Select this component for applications requiring a P-channel MOSFET with a -60 V breakdown voltage and a continuous current rating of -5 A. Consider the 0.16 Ω typical on-resistance for efficiency optimization. Verify that the 4-V gate drive requirement aligns with the system logic levels. Evaluate the thermal resistance of 5.0 °C/W for heat dissipation planning in the target enclosure.
Part Context
This part belongs to the Toshiba Field Effect Transistor series employing Silicon P Channel MOS Type technology. It is categorized under general electronics components suitable for industrial and consumer equipment. The device is manufactured using advanced MOS processes to achieve low on-resistance and high speed switching capabilities within a standard SC-67 package.
Replacement Considerations
Consult official Toshiba documentation for confirmed substitute part numbers. Cross-reference specifications such as drain-source voltage, on-resistance, and package type when evaluating potential alternatives from other manufacturers.
