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Product Detailed Parameters
- Description：P-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Procurement Notes
Verify the specific suffix and manufacturer documentation to confirm exact electrical characteristics, package dimensions, and automotive qualification status. Ensure compatibility with target thermal management and circuit design requirements before procurement.
Selection Notes
Select this component for high-voltage P-channel switching applications requiring robust performance. Evaluate voltage ratings, current handling capabilities, and thermal resistance against system constraints to ensure reliable operation within specified limits.
Part Context
The 2SJ529-91L-E is a P-channel MOSFET manufactured by Renesas Electronics Corporation. It belongs to the discrete semiconductor product category, specifically designed for power switching functions in electronic circuits.
