2SJ545-E

$1.04

Description：P-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:abf195dafe90 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：P-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SJ545-E

Overview

The 2SJ545-E is a P-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a -60V drain-source voltage rating and supports a continuous drain current of -12A. The device exhibits an on-resistance of 0.15 ohms, ensuring efficient power handling in switching applications. It is housed in a TO-220CFM package, providing robust thermal performance for industrial and consumer electronics designs requiring reliable high-side or low-side switching capabilities.

Feature Summary

P-channel silicon MOSFET construction for complementary switching configurations
Low on-resistance characteristic to minimize conduction losses
TO-220CFM package design for effective heat dissipation

Applications

DC-DC converter circuits
Motor control systems
Power supply load switches

Procurement Notes

Verify the specific suffix '-E' against the manufacturer's latest datasheet to confirm compliance with current environmental standards and pinout definitions. Ensure the ordering part number matches the exact package variant required for your PCB footprint. Cross-reference the RoHS status directly with official documentation before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring a -60V P-channel switch with moderate current handling capabilities. The TO-220CFM package is suitable for applications where through-hole mounting and direct heatsinking are preferred over surface-mount alternatives. Evaluate thermal resistance requirements based on the expected duty cycle and ambient operating conditions.

Part Context

This component belongs to Renesas' discrete power transistor portfolio, specifically designed for general-purpose power switching. It serves as a complement to N-channel devices in half-bridge or full-bridge topologies. The product line focuses on balancing performance with cost-effectiveness for mass-market electronic equipment.

Replacement Considerations

Consult official substitution guides for equivalent P-channel MOSFETs with matching voltage and current ratings. Verify that any alternative device maintains compatible gate threshold voltages and package dimensions to ensure seamless integration without redesigning the printed circuit board.