ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：SMALL SIGNAL P-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SJ598-AY is a P-channel silicon small-signal MOSFET manufactured by Renesas Electronics Corporation. It is housed in a TO-251AA (MP-3) surface-mount package with three terminals. The device features a maximum drain-source breakdown voltage of 60V and supports a continuous drain current of 12A. Key electrical characteristics include a maximum on-resistance of 0.19Ω and an enhancement mode operation capability. The component is rated for a maximum operating temperature of 150°C.
Feature Summary
- P-channel metal-oxide semiconductor construction
- Integrated body diode configuration
- Surface-mount TO-251AA packaging
Applications
- General-purpose switching applications
- Small signal power management circuits
Procurement Notes
Verify the specific suffix 'AY' against official Renesas documentation to confirm exact binning or tape-and-reel specifications, as generic datasheets may not detail all suffix variations. Ensure compliance requirements are checked, as listed parameters indicate non-RoHS status for some variants. Confirm pinout alignment with TO-251AA standards before integration.
Selection Notes
Select this component for designs requiring a 60V P-channel MOSFET with high current handling up to 12A. The low on-resistance of 0.19Ω makes it suitable for efficient switching where thermal performance is critical. Consider the TO-251AA package for surface-mount assembly constraints and verify that the 150°C junction temperature rating meets the system's thermal design goals.
Part Context
This part belongs to the Renesas discrete semiconductor transistor portfolio, specifically within the small-signal MOSFET category. Renesas provides a broad range of power management and signal processing components, with this MOSFET serving as a fundamental building block for analog and mixed-signal circuit designs requiring reliable switching capabilities.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Generic cross-references should be validated against pinout, voltage ratings, and package dimensions to ensure functional compatibility without modifying the existing board layout.
